Publication:

The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs

Date

2008
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorLorenz, Anne
dc.contributor.authorJohn, Joachim
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDas, Jo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:32:06Z
dc.date.available2021-10-17T08:32:06Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14065
dc.source.conference32nd Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate18/05/2008
dc.source.conferencelocationLeuven Belgium
dc.title

The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
18279.pdf
Size:
57.89 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions