Publication:

Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions

Date

2007
Proceedings Paper
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dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVissouvanadin Soubaretty, Bertrand
dc.contributor.authorThomas, Nicole
dc.contributor.authorTaleb, Nadjib
dc.contributor.authorVerheyen, Peter
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLeys, Frederik
dc.contributor.authorRichard, Olivier
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTomasini, P.
dc.contributor.authorThomas, S.G.
dc.contributor.authorLu, J.P
dc.contributor.authorWise, R.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T15:02:45Z
dc.date.available2021-10-16T15:02:45Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11698
dc.source.beginpage496
dc.source.conferenceWorkshop on Semiconductor Advances for Future Electronics and Sensors - SAFE
dc.source.conferencedate29/11/2007
dc.source.conferencelocationVeldhoven the Netherlands
dc.source.endpage200
dc.title

Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions

dc.typeProceedings paper
dspace.entity.typePublication
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