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Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe

Date

1998
Proceedings Paper
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dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoward, Dave
dc.contributor.authorKimura, K.
dc.contributor.authorNakajima, K.
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-09-30T11:33:49Z
dc.date.available2021-09-30T11:33:49Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2444
dc.source.beginpage339
dc.source.conferenceEpitaxy and Applications of Si-Based Heterostructures
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francicso, CA USA
dc.source.endpage344
dc.title

Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe

dc.typeProceedings paper
dspace.entity.typePublication
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