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Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

Date

2005
Meeting abstract
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dc.contributor.authorNiwa, Masaaki
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorHayashi, S.
dc.contributor.authorHarada, Y.
dc.contributor.authorKubota, M.
dc.contributor.authorRothschild, Aude
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T03:40:08Z
dc.date.available2021-10-16T03:40:08Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10934
dc.source.beginpage516
dc.source.conferenceMeeting Abstracts 208th Meeting of the Electrochemical Society
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA California
dc.title

Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

dc.typeMeeting abstract
dspace.entity.typePublication
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