Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures

Publication:

2021

Journal article

Author(s)

;

;

;

;

;

IEEE TRANSACTIONS ON ELECTRON DEVICES

1949 since deposited on 2022-03-07

Acq. date: 2026-03-17