Publication:

Source/drain junction integration issues in submicron Ge MOSFETs

Date

2008
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorSatta, Alessandra
dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorOpsomer, Karl
dc.contributor.authorMeuris, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T10:48:28Z
dc.date.available2021-10-17T10:48:28Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14479
dc.source.beginpage211
dc.source.conference9th International Conference on Solid-State and Integrated-Circuit Technology - IC-SICT
dc.source.conferencedate20/10/2008
dc.source.conferencelocationBeijing China
dc.source.endpage214
dc.title

Source/drain junction integration issues in submicron Ge MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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