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Low-frequency noise behavior at low temperature (80K-300K) of silicon passivated Ge pMOSFETs with high-K metal gate stack

Date

2007
Proceedings Paper
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dc.contributor.authorGuo, W.
dc.contributor.authorCretu, B.
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, R.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T16:26:06Z
dc.date.available2021-10-16T16:26:06Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12238
dc.source.beginpage29
dc.source.conferenceNoise and Fluctuations: 19th International Conference
dc.source.conferencedate9/09/2007
dc.source.conferencelocationTokyo Japan
dc.source.endpage32
dc.title

Low-frequency noise behavior at low temperature (80K-300K) of silicon passivated Ge pMOSFETs with high-K metal gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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