Publication:

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Date

2016
Proceedings Paper
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dc.contributor.authorWu, Tian-Li
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorKang, Xuanwu
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T17:19:43Z
dc.date.available2021-10-23T17:19:43Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27605
dc.source.beginpage4A.2
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

dc.typeProceedings paper
dspace.entity.typePublication
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