Publication:

Low-frequency noise assessment of the oxide trap density in thick-oxide input-output transistors for DRAM applications

Date

2016
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSchram, Tom
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorFazan, Pierre
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T14:59:35Z
dc.date.available2021-10-23T14:59:35Z
dc.date.issued2016
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27321
dc.identifier.urlhttp://jss.ecsdl.org/content/5/6/N27.abstract
dc.source.beginpageN27
dc.source.endpageN31
dc.source.issue6
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume5
dc.title

Low-frequency noise assessment of the oxide trap density in thick-oxide input-output transistors for DRAM applications

dc.typeJournal article
dspace.entity.typePublication
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