Publication:

A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components

Date

Loading...
Thumbnail Image

Abstract

Description

Statistics

Downloads

3 since deposited on 2021-10-14
Acq. date: 2026-04-26

Views

2215 since deposited on 2021-10-14
2last month
Acq. date: 2026-04-26

Citations

Statistics

Downloads

3 since deposited on 2021-10-14
Acq. date: 2026-04-26

Views

2215 since deposited on 2021-10-14
2last month
Acq. date: 2026-04-26

Citations