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A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
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Acq. date: 2025-12-09
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2205 since deposited on 2021-10-14
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Acq. date: 2025-12-09
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3 since deposited on 2021-10-14
Acq. date: 2025-12-09
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2205 since deposited on 2021-10-14
1last month
Acq. date: 2025-12-09
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