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A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components

Date

2000
Proceedings Paper
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dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorVleugels, Frank
dc.contributor.authorKuhn, Rudiger
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorJenei, Snezana
dc.contributor.authorCroon, Jeroen
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorDa Rold, Martina
dc.contributor.authorRosseel, Erik
dc.contributor.authorChevalier, P.
dc.contributor.authorCoppens, P.
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorRosseel, Erik
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.date.accessioned2021-10-14T12:51:21Z
dc.date.available2021-10-14T12:51:21Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4297
dc.source.beginpage106
dc.source.conferenceProceedings Bipolar/BiCMOS Circuits and Technology Meeting - BCTM
dc.source.conferencedate24/09/2000
dc.source.conferencelocationMinneapolis, MN USA
dc.source.endpage109
dc.title

A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components

dc.typeProceedings paper
dspace.entity.typePublication
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