Publication:

Materials issues of Ni fully silicided (FUSI) gates for CMOS applications

Date

2005-05
Proceedings Paper
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dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Dal, Mark
dc.contributor.authorSchram, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorKaiser, M.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorCunniffe, John
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorVrancken, Christa
dc.contributor.authorBiesemans, Serge
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-16T02:33:11Z
dc.date.available2021-10-16T02:33:11Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10700
dc.source.beginpage225
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage232
dc.title

Materials issues of Ni fully silicided (FUSI) gates for CMOS applications

dc.typeProceedings paper
dspace.entity.typePublication
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