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A new method to calculate leakage current and its applications for sub-45nm MOSFETs

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dc.contributor.authorLujan, Guilherme
dc.contributor.authorMagnus, Wim
dc.contributor.authorSoree, Bart
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Dal, Mark
dc.contributor.authorLauwers, Anne
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T03:04:42Z
dc.date.available2021-10-16T03:04:42Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10808
dc.source.beginpage489
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2005
dc.source.conferencelocationGrenoble France
dc.source.endpage492
dc.title

A new method to calculate leakage current and its applications for sub-45nm MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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