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Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown

Date

1998
Proceedings Paper
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dc.contributor.authorHoussa, Michel
dc.contributor.authorVandewalle, N.
dc.contributor.authorNigam, Tanya
dc.contributor.authorAusloos, M.
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-30T12:14:29Z
dc.date.available2021-09-30T12:14:29Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2644
dc.source.beginpage909
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/1998
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage912
dc.title

Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown

dc.typeProceedings paper
dspace.entity.typePublication
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