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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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Date
2022
Journal article
https://doi.org/10.1109/TED.2021.3134928
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tallarico, A. N.
;
Millesimo, M.
;
Bakeroot, Benoit
;
Borga, Matteo
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, E.
;
Fiegna, C.
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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879
since deposited on 2022-01-01
179
last month
40
last week
Acq. date: 2025-12-12
Views
2019
since deposited on 2022-01-01
3
last month
Acq. date: 2025-12-12
Citations