Publication:

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Date

2022
Journal article
https://doi.org/10.1109/TED.2021.3134928
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dc.contributor.authorTallarico, A. N.
dc.contributor.authorMillesimo, M.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorBorga, Matteo
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, E.
dc.contributor.authorFiegna, C.
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-02-02T11:28:27Z
dc.date.available2022-01-01T02:06:30Z
dc.date.available2022-02-02T11:28:27Z
dc.date.embargo2022-02-28
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by Intelligent Reliability 4.0 (iRel40). iRel40 is a European cofunded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under Grant 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Turkey.
dc.identifier.doi10.1109/TED.2021.3134928
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38693
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage507
dc.source.endpage513
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume69
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsV-TH
dc.subject.keywordsPOWER
dc.subject.keywordsTECHNOLOGY
dc.subject.keywordsSHIFT
dc.title

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

dc.typeJournal article
dspace.entity.typePublication
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