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Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Publication:
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Date
2018
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nuytten, Thomas
;
Bogdanowicz, Janusz
;
Witters, Liesbeth
;
Eneman, Geert
;
Hantschel, Thomas
;
Schulze, Andreas
;
Favia, Paola
;
Bender, Hugo
;
De Wolf, Ingrid
;
Vandervorst, Wilfried
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APL Materials
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1937
since deposited on 2021-10-26
Acq. date: 2025-12-08
Citations
Metrics
Views
1937
since deposited on 2021-10-26
Acq. date: 2025-12-08
Citations