Publication:

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

Date

2018
Journal article
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dc.contributor.authorNuytten, Thomas
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHantschel, Thomas
dc.contributor.authorSchulze, Andreas
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned2021-10-26T00:17:47Z
dc.date.available2021-10-26T00:17:47Z
dc.date.issued2018
dc.identifier.issn2166-532X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31434
dc.identifier.urlhttp://aip.scitation.org/doi/abs/10.1063/1.4999277
dc.source.beginpage58501
dc.source.issue5
dc.source.journalAPL Materials
dc.source.volume6
dc.title

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

dc.typeJournal article
dspace.entity.typePublication
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