Publication:

CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials

Date

2023-06-11
Proceedings Paper
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dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2023-12-12T10:48:00Z
dc.date.available2023-08-24T17:41:48Z
dc.date.available2023-08-26T20:00:42Z
dc.date.available2023-12-12T10:48:00Z
dc.date.embargo2023-06-12
dc.date.issued2023-06-11
dc.identifier.eisbn978-4-86348-808-3
dc.identifier.issn2161-4636
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42389
dc.publisherIEEE
dc.source.beginpage1
dc.source.conference26th Silicon Nanoelectronics Workshop (SNW)
dc.source.conferencedateJUN 11-12, 2023
dc.source.conferencelocationKyoto
dc.source.endpage2
dc.source.journalna
dc.source.numberofpages2
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsnanosheet
dc.subject.keywordsCFET
dc.subject.keywordshigh mobility channel
dc.subject.keywords2D materials
dc.title

CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials

dc.typeProceedings paper
dspace.entity.typePublication
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