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Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers

Date

2003
Proceedings Paper
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dc.contributor.authorCarter, Richard
dc.contributor.authorTsai, Wilman
dc.contributor.authorYoung, Edward
dc.contributor.authorMaes, Jan
dc.contributor.authorChen, P.J.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorZhao, Chao
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T04:06:27Z
dc.date.available2021-10-15T04:06:27Z
dc.date.embargo9999-12-31
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7287
dc.source.beginpage35
dc.source.conferenceNovel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
dc.source.endpage40
dc.title

Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers

dc.typeProceedings paper
dspace.entity.typePublication
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