Publication:

Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

Date

2020
Proceedings Paper
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-29T07:03:27Z
dc.date.available2021-10-29T07:03:27Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36232
dc.identifier.urlhttps://doi.org/10.1149/09701.0023ecst
dc.source.beginpage23
dc.source.conference237th ECS Meeting - 'Dielectrics for Nanosystems 8: Materials Science, Processing, Reliability,and Manufacturing
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.source.endpage33
dc.title

Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

dc.typeProceedings paper
dspace.entity.typePublication
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