Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
Publication:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
Copy permalink
Date
2013
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
32142.pdf
68.02 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bayerl, Albin
;
Lanza, Mario
;
Aguilera, Lidia
;
Porti, Marc
;
Nafria, Montserrat
;
Aymerich, Xavier
;
De Gendt, Stefan
Journal
Microelectronics Reliability
Abstract
Description
Metrics
Views
1955
since deposited on 2021-10-21
Acq. date: 2025-12-09
Citations
Metrics
Views
1955
since deposited on 2021-10-21
Acq. date: 2025-12-09
Citations