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Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Date

2013
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dc.contributor.authorBayerl, Albin
dc.contributor.authorLanza, Mario
dc.contributor.authorAguilera, Lidia
dc.contributor.authorPorti, Marc
dc.contributor.authorNafria, Montserrat
dc.contributor.authorAymerich, Xavier
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-21T06:45:09Z
dc.date.available2021-10-21T06:45:09Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22026
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271413000486
dc.source.beginpage867
dc.source.endpage871
dc.source.issue6
dc.source.journalMicroelectronics Reliability
dc.source.volume53
dc.title

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

dc.typeJournal article
dspace.entity.typePublication
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