Publication:

High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

Date

2010
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorHibino, Daisuke
dc.contributor.authorShindo, Hiroyuki
dc.contributor.authorAbe, Yuuichi
dc.contributor.authorHojyo, Yutaka
dc.contributor.authorFenger, Germain
dc.contributor.authorDo, Thuy
dc.contributor.authorKusnadi, Ir
dc.contributor.authorSturtevant, John L.
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorVan de Kerkhove, Jeroen
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVan de Kerkhove, Jeroen
dc.date.accessioned2021-10-18T17:05:27Z
dc.date.available2021-10-18T17:05:27Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17264
dc.source.beginpage76381X
dc.source.conferenceMetrology, Inspection and Process Control for Microlithography XXIV
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
dc.title

High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
20403.pdf
Size:
2.44 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions