Publication:

High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

Date

2010
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-8297-5076
cris.virtual.orcid0009-0005-4824-0411
cris.virtualsource.departmentbf23291b-8cd7-495b-b210-564de11c9d4f
cris.virtualsource.department34111beb-7a3a-4530-b662-de0bc5f7d47c
cris.virtualsource.orcidbf23291b-8cd7-495b-b210-564de11c9d4f
cris.virtualsource.orcid34111beb-7a3a-4530-b662-de0bc5f7d47c
dc.contributor.authorHibino, Daisuke
dc.contributor.authorShindo, Hiroyuki
dc.contributor.authorAbe, Yuichi
dc.contributor.authorHojyo, Yutaka
dc.contributor.authorFenger, Germain
dc.contributor.authorDo, Thuy
dc.contributor.authorKusnadi, Ir
dc.contributor.authorSturtevant, John L.
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorVan de Kerkhove, Jeroen
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVan de Kerkhove, Jeroen
dc.date.accessioned2021-10-18T17:05:27Z
dc.date.available2021-10-18T17:05:27Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17264
dc.source.beginpage76381X
dc.source.conferenceMetrology, Inspection and Process Control for Microlithography XXIV
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
dc.title

High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

dc.typeProceedings paper
dspace.entity.typePublication
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