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Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Publication:
Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Date
2019
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rosseel, Erik
;
Tirrito, Matteo
;
Porret, Clément
;
Douhard, Bastien
;
Meersschaut, Johan
;
Hikavyy, Andriy
;
Loo, Roger
;
Horiguchi, Naoto
;
Pourtois, Geoffrey
;
Nakazaki, Nobuya
;
Tolle, John
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1
since deposited on 2021-10-27
Acq. date: 2025-10-28
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1985
since deposited on 2021-10-27
Acq. date: 2025-10-28
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Downloads
1
since deposited on 2021-10-27
Acq. date: 2025-10-28
Views
1985
since deposited on 2021-10-27
Acq. date: 2025-10-28
Citations