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Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy

Date

2019
Proceedings Paper
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dc.contributor.authorRosseel, Erik
dc.contributor.authorTirrito, Matteo
dc.contributor.authorPorret, Clément
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorTolle, John
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-27T17:16:04Z
dc.date.available2021-10-27T17:16:04Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33908
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/11.abstract
dc.source.beginpage11
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison, WI USA
dc.source.endpage15
dc.title

Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy

dc.typeProceedings paper
dspace.entity.typePublication
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