Publication:

Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications

Date

2021
Journal article
https://doi.org/10.1016/j.sse.2021.108089
Simple item page Full metadata Statistics
 
dc.contributor.authorGupta, Sumreti
dc.contributor.authorRathi, Aarti
dc.contributor.authorParvais, Bertrand
dc.contributor.authorDixit, Abhisek
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2022-03-03T13:19:02Z
dc.date.available2022-03-03T13:19:02Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108089
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39272
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108089
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume185
dc.subject.keywordsMOSFET
dc.subject.keywordsMOBILITY
dc.title

Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles