Publication:

Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

Date

2021
Journal article
https://doi.org/10.1109/TDMR.2021.3073473
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dc.contributor.authorHiblot, Gaspard
dc.contributor.authorParihar, Narendra
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorMannaert, Geert
dc.contributor.authorBaudot, Sylvain
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVandooren, Anne
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMercha, Abdelkarim
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorParihar, Narendra
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecBen Kaczer::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2022-02-22T14:34:51Z
dc.date.available2022-02-22T14:34:51Z
dc.date.issued2021
dc.identifier.doi10.1109/TDMR.2021.3073473
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39025
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage192
dc.source.endpage198
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.source.numberofpages7
dc.source.volume21
dc.subject.keywordsHIGH-K/METAL-GATE
dc.subject.keywordsLEAKAGE CURRENT
dc.subject.keywordsMODEL
dc.title

Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

dc.typeJournal article
dspace.entity.typePublication
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