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SWIR InP-on-silicon tunable laser based on micro-transfer printing

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dc.contributor.authorGuo, Xin
dc.contributor.authorSoltanian, Emad
dc.contributor.authorZhang, Jing
dc.contributor.authorVaissiere, Nicolas
dc.contributor.authorNeel, Delphine
dc.contributor.authorRamirez, Joan
dc.contributor.authorDecobert, Jean
dc.contributor.authorUvin, Sarah
dc.contributor.authorRoelkens, Gunther
dc.contributor.imecauthorGuo, Xin
dc.contributor.imecauthorSoltanian, Emadreza
dc.contributor.imecauthorZhang, Jing
dc.contributor.imecauthorUvin, Sarah
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecGuo, Xin::0000-0002-4744-1968
dc.contributor.orcidimecZhang, Jing::0000-0001-6608-9990
dc.contributor.orcidimecUvin, Sarah::0000-0001-6008-9906
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2025-07-25T04:01:11Z
dc.date.available2025-07-25T04:01:11Z
dc.date.issued2025
dc.description.abstractWe demonstrate for the first time an InP-on-silicon laser with a tuning range from 1652 nm to 1706 nm realized using micro-transfer printing (μTP) technology. The laser achieves an output power of 1 mW. The laser cavities are fabricated in imec’s silicon photonics (SiPh) pilot line on 200 mm Silicon-on-Insulator (SOI) wafers with micro-transfer printed III-V gain chips.
dc.identifier.doi10.1117/12.3039975
dc.identifier.eisbn978-1-5106-8489-8
dc.identifier.isbn978-1-5106-8488-1
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45934
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage1337009-1
dc.source.conference2025 Conference on Smart Photonic and Optoelectronic Integrated Circuits
dc.source.conferencedate2025-03-19
dc.source.conferencelocationSan Francisco
dc.source.endpage1337009-4
dc.source.journalProceedings of SPIE
dc.source.numberofpages4
dc.title

SWIR InP-on-silicon tunable laser based on micro-transfer printing

dc.typeProceedings paper
dspace.entity.typePublication
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