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Experimental characterization of NBTI effect on pMOSFET and CMOS inverter

Date

2009-02
Proceedings Paper
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dc.contributor.authorFernandez, Raul
dc.contributor.authorKaczer, Ben
dc.contributor.authorGago, J.
dc.contributor.authorRodriguez, Rosana
dc.contributor.authorNafria, Montserrat
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T22:12:28Z
dc.date.available2021-10-17T22:12:28Z
dc.date.issued2009-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15303
dc.source.beginpage231
dc.source.conferenceSpanish Conference on Electron Devices - CDE
dc.source.conferencedate11/02/2009
dc.source.conferencelocationSantiago de Compostela Spain
dc.source.endpage233
dc.title

Experimental characterization of NBTI effect on pMOSFET and CMOS inverter

dc.typeProceedings paper
dspace.entity.typePublication
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