Publication:

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Date

2018-10
Journal article
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dc.contributor.authorGupta, Somya
dc.contributor.authorShimura, Yosuke
dc.contributor.authorRichard, Olivier
dc.contributor.authorDouhard, Bastien
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBender, Hugo
dc.contributor.authorNakatsuka, Osama
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-25T19:24:17Z
dc.date.available2021-10-25T19:24:17Z
dc.date.issued2018-10
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30827
dc.identifier.urlhttps://doi.org/10.1063/1.5048683
dc.source.beginpage192103
dc.source.issue19
dc.source.journalApplied Physics Letters
dc.source.volume113
dc.title

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

dc.typeJournal article
dspace.entity.typePublication
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