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Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
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Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
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Date
2021
Journal article
https://doi.org/10.1109/TPEL.2020.3031680
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Li, Xiangdong
;
Posthuma, Niels
;
Bakeroot, Benoit
;
Liang, Hu
;
You, Shuzhen
;
Wu, Zhicheng
;
Zhao, Ming
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
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1955
since deposited on 2022-02-24
1
last month
Acq. date: 2025-12-15
Citations