Publication:

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

Date

2021
Journal article
https://doi.org/10.1109/TPEL.2020.3031680
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dc.contributor.authorLi, Xiangdong
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorWu, Zhicheng
dc.contributor.authorZhao, Ming
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecLi, Xiangdong::0000-0002-6694-0914
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.accessioned2022-02-24T15:46:39Z
dc.date.available2022-02-24T15:46:39Z
dc.date.issued2021
dc.identifier.doi10.1109/TPEL.2020.3031680
dc.identifier.issn0885-8993
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39122
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage4927
dc.source.endpage4930
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON POWER ELECTRONICS
dc.source.numberofpages4
dc.source.volume36
dc.title

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

dc.typeJournal article
dspace.entity.typePublication
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