2022 18TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN, SMACD
Abstract
This paper addresses the automated parameter extraction of Random Telegraph Noise (RTN) models in nanoscale field-effect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/de-trapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows getting distribution functions of the amplitude of the current shifts and of the number of active defects vs. time.
