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A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-2155-8305
cris.virtualsource.department060412a0-f333-4964-b692-f1ab550c24c1
cris.virtualsource.orcid060412a0-f333-4964-b692-f1ab550c24c1
dc.contributor.authorSaraza Canflanca, Pablo
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorRoca, E.
dc.contributor.authorCastro-Lopez, R.
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorFernandez, F. V.
dc.date.accessioned2026-03-23T15:10:16Z
dc.date.available2026-03-23T15:10:16Z
dc.date.createdwos2025-11-06
dc.date.issued2022
dc.description.abstractThis paper addresses the automated parameter extraction of Random Telegraph Noise (RTN) models in nanoscale field-effect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/de-trapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows getting distribution functions of the amplitude of the current shifts and of the number of active defects vs. time.
dc.description.wosFundingTextThis work was supported in part by grants PID2019-103869RB-C31 and PID2019-103869RB-C32 funded by MCIN/AEI/ 10.13039/501100011033, and by grant US-1380876 funded by Consejeria de Economia, Conocimiento, Empresas y Universidad de la Junta de Andalucia and P.O. FEDER.
dc.identifier.doi10.1109/smacd55068.2022.9816234
dc.identifier.issn2575-4874
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58918
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conference18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
dc.source.conferencedate2022-06-12
dc.source.conferencelocationVillasimius
dc.source.journal2022 18TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN, SMACD
dc.source.numberofpages4
dc.subject.keywordsTIME-DEPENDENT VARIABILITY
dc.subject.keywordsSTATISTICAL CHARACTERIZATION
dc.title

A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-11-20
imec.internal.sourcecrawler
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