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Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)

Date

2009
Proceedings Paper
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dc.contributor.authorZahid, Mohammed
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorPantisano, Luigi
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-18T05:39:58Z
dc.date.available2021-10-18T05:39:58Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16593
dc.source.beginpage21
dc.source.conference47th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate26/04/2009
dc.source.conferencelocationMontreal Canada
dc.source.endpage25
dc.title

Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)

dc.typeProceedings paper
dspace.entity.typePublication
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