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Recombination probabilities of O and H atoms on the surface of nanoporous low dielectric constant SiCOH films

Date

2009
Proceedings Paper
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dc.contributor.authorBraginsky, O.V.
dc.contributor.authorKovalev, A.S.
dc.contributor.authorLopaev, D.V.
dc.contributor.authorMalykhin, E.M.
dc.contributor.authorMankelevich, Y.A.
dc.contributor.authorRakhimova, T.V.
dc.contributor.authorRakhimov, A.T.
dc.contributor.authorVasilieva, A.N.
dc.contributor.authorZyryanov, S.M.
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-17T21:27:22Z
dc.date.available2021-10-17T21:27:22Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15034
dc.source.beginpage573
dc.source.conferenceAdvanced Metallization Conference 2008 (AMC 2008)
dc.source.conferencedate8/10/2008
dc.source.conferencelocationTokyo Japan
dc.source.endpage579
dc.title

Recombination probabilities of O and H atoms on the surface of nanoporous low dielectric constant SiCOH films

dc.typeProceedings paper
dspace.entity.typePublication
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