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Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions

Date

2007
Proceedings Paper
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dc.contributor.authorFaifer, V.N.
dc.contributor.authorSchroder, D.K.
dc.contributor.authorCurrent, M.I.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorTimans, P.J.
dc.contributor.authorZangerle, T.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorWong, T.M.H.
dc.contributor.authorMoussa, Alain
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorLerch, W.
dc.contributor.authorPaul, S.
dc.contributor.authorBolze, D.
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.date.accessioned2021-10-16T16:05:47Z
dc.date.available2021-10-16T16:05:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12147
dc.source.beginpage272
dc.source.conferenceInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling
dc.source.conferencedate6/05/2007
dc.source.conferencelocationNapa, CA USA
dc.source.endpage279
dc.title

Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions

dc.typeProceedings paper
dspace.entity.typePublication
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