Publication:

A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

Date

2012
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorMeneghini, M.
dc.contributor.authorBertin, M.
dc.contributor.authorDal Santo, G.
dc.contributor.authorStocco, A.
dc.contributor.authorChini, A.
dc.contributor.authorMarcon, Denis
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMura, G.
dc.contributor.authorMusu, E.
dc.contributor.authorVanzi, M.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorZanoni, E.
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.date.accessioned2021-10-20T13:26:26Z
dc.date.available2021-10-20T13:26:26Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21133
dc.source.beginpage13.3
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
dc.title

A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions