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Optimisation of a pre-metal-dielectric with a contact etch stop layer for 0.18μm and 0.13μm technologies

Date

2000
Proceedings Paper
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dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan den bosch, G.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBadenes, Gonçal
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-14T12:48:10Z
dc.date.available2021-10-14T12:48:10Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4255
dc.source.beginpage260
dc.source.conferenceProceedings of the 30th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2000
dc.source.conferencelocationCork Ireland
dc.source.endpage263
dc.title

Optimisation of a pre-metal-dielectric with a contact etch stop layer for 0.18μm and 0.13μm technologies

dc.typeProceedings paper
dspace.entity.typePublication
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