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Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages align

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dc.contributor.authorFranke, Joern-Holger
dc.contributor.authorFrommhold, Andreas
dc.contributor.authorDavydova, Natalia
dc.contributor.authorAubert, Remko
dc.contributor.authorNair, Vineet Vijayakrishnan
dc.contributor.authorKovalevich, Tatiana
dc.contributor.authorRio, David
dc.contributor.authorBekaert, Joost
dc.contributor.authorWang, Erik
dc.contributor.authorRispens, Gijsbert
dc.contributor.authorMaslow, Mark
dc.contributor.authorHendrickx, Eric
dc.contributor.imecauthorFranke, Joern-Holger
dc.contributor.imecauthorFrommhold, Andreas
dc.contributor.imecauthorAubert, Remko
dc.contributor.imecauthorNair, Vineet Vijayakrishnan
dc.contributor.imecauthorKovalevich, Tatiana
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.orcidimecFranke, Joern-Holger::0000-0002-3571-1633
dc.contributor.orcidimecFrommhold, Andreas::0000-0001-6824-5643
dc.contributor.orcidimecNair, Vineet Vijayakrishnan::0000-0002-8970-2425
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.date.accessioned2022-03-11T13:36:55Z
dc.date.available2022-03-11T13:36:55Z
dc.date.issued2021
dc.identifier.doi10.1117/12.2584733
dc.identifier.eisbn978-1-5106-4052-8
dc.identifier.isbn978-1-5106-4051-1
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39414
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage116090R
dc.source.conferenceConference on Extreme Ultraviolet (EUV) Lithography XII
dc.source.conferencedateFEB 22-26, 2021
dc.source.conferencelocationVirtual
dc.source.journalProceedings of SPIE
dc.source.numberofpages20
dc.source.volume11609
dc.title

Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages align

dc.typeProceedings paper
dspace.entity.typePublication
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