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A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon

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dc.contributor.authorMelkonyan, Davit
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorMorris, Richard
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorCuduvally, Ramya
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.date.accessioned2021-10-25T23:20:34Z
dc.date.available2021-10-25T23:20:34Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31329
dc.source.conferenceAtom Probe Tomography and Microscopy - APT&M
dc.source.conferencedate10/06/2018
dc.source.conferencelocationGaithersburg, MD USA
dc.title

A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon

dc.typeProceedings paper
dspace.entity.typePublication
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