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Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy
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1833 since deposited on 2021-10-20
Acq. date: 2025-12-16
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1833 since deposited on 2021-10-20
Acq. date: 2025-12-16
Citations