Publication:

Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy

Date

2012
Proceedings Paper
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dc.contributor.authorCantoro, Mirco
dc.contributor.authorMerckling, Clement
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T10:11:29Z
dc.date.available2021-10-20T10:11:29Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20415
dc.source.beginpage1
dc.source.conferenceIEEE Compound Semiconductor Integrated Circuit Symposium - CSICS
dc.source.conferencedate14/10/2012
dc.source.conferencelocationLa Jolla, CA USA
dc.source.endpage4
dc.title

Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy

dc.typeProceedings paper
dspace.entity.typePublication
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