Boron-doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells

dc.contributor.author	Recaman Payo, Maria
dc.contributor.author	Posthuma, Niels
dc.contributor.author	Uruena De Castro, Angel
dc.contributor.author	Debucquoy, Maarten
dc.contributor.author	Poortmans, Jef
dc.contributor.imecauthor	Recaman Payo, Maria
dc.contributor.imecauthor	Posthuma, Niels
dc.contributor.imecauthor	Debucquoy, Maarten
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.orcidimec	Posthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimec	Debucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-22T05:03:24Z
dc.date.available	2021-10-22T05:03:24Z
dc.date.issued	2014
dc.identifier.issn	1062-7995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24427
dc.identifier.url	http://onlinelibrary.wiley.com/doi/10.1002/pip.2427/abstract002/pip.2427/abstract
dc.source.beginpage	711
dc.source.endpage	725
dc.source.issue	7
dc.source.journal	Progress in Photovoltaics Research and Applications
dc.source.volume	22
dc.title	Boron-doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells
dc.type	Journal article
dspace.entity.type	Publication
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