Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs

dc.contributor.author	Guo, Wei
dc.contributor.author	Cretu, B.
dc.contributor.author	Routoure, J.-M.
dc.contributor.author	Carin, R.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Mercha, Abdelkarim
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Put, Sofie
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Guo, Wei
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Mercha, Abdelkarim
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Mercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-17T07:28:41Z
dc.date.available	2021-10-17T07:28:41Z
dc.date.issued	2008
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13826
dc.source.beginpage	1889
dc.source.endpage	1894
dc.source.issue	12
dc.source.journal	Solid-State Electronics
dc.source.volume	52
dc.title	Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs
dc.type	Journal article
dspace.entity.type	Publication
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