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GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
Publication:
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
Date
2024
Proceedings Paper
https://doi.org/10.1007/978-3-031-48711-8_35
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ercolano, Franco
;
Tallarico, Andrea Natale
;
Millesimo, Maurizio
;
Gnani, Elena
;
Reggiani, Susanna
;
Fiegna, Claudio
;
Borga, Matteo
;
Posthuma, Niels
;
Bakeroot, Benoit
Journal
Lecture Notes in Electrical Engineering
Abstract
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146
since deposited on 2025-04-21
Acq. date: 2025-10-23
Citations
Metrics
Views
146
since deposited on 2025-04-21
Acq. date: 2025-10-23
Citations