Publication:

GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current

Date

2024

Proceedings Paper

https://doi.org/10.1007/978-3-031-48711-8_35

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Author(s)

Ercolano, Franco

;

Tallarico, Andrea Natale

;

Millesimo, Maurizio

;

;

Reggiani, Susanna

;

Fiegna, Claudio

;

;

Posthuma, Niels

;

Bakeroot, Benoit

Journal

Lecture Notes in Electrical Engineering

Metrics

149 since deposited on 2025-04-21

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Acq. date: 2025-12-09