Publication:
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
| dc.contributor.author | Ercolano, Franco | |
| dc.contributor.author | Tallarico, Andrea Natale | |
| dc.contributor.author | Millesimo, Maurizio | |
| dc.contributor.author | Gnani, Elena | |
| dc.contributor.author | Reggiani, Susanna | |
| dc.contributor.author | Fiegna, Claudio | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Posthuma, Niels | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Posthuma, Niels | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.date.accessioned | 2025-06-05T08:58:38Z | |
| dc.date.available | 2025-04-21T04:55:05Z | |
| dc.date.available | 2025-06-05T08:58:38Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | Part of this work is funded by iRel40, a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. | |
| dc.identifier.doi | 10.1007/978-3-031-48711-8_35 | |
| dc.identifier.eisbn | 978-3-031-48711-8 | |
| dc.identifier.issn | 1876-1100 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45551 | |
| dc.publisher | SPRINGER INTERNATIONAL PUBLISHING AG | |
| dc.source.beginpage | 288 | |
| dc.source.conference | 54th Meeting of the Italian Electronics Society | |
| dc.source.conferencedate | SEP 06-08, 2023 | |
| dc.source.conferencelocation | Noto | |
| dc.source.endpage | 297 | |
| dc.source.journal | Lecture Notes in Electrical Engineering | |
| dc.source.numberofpages | 10 | |
| dc.source.volume | 1113 | |
| dc.title | GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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