Publication:
Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition
| dc.contributor.author | Lin, Zaoyang | |
| dc.contributor.author | Dekelver, Sven | |
| dc.contributor.author | Cott, Daire | |
| dc.contributor.author | Groven, Benjamin | |
| dc.contributor.author | Sergeant, Stefanie | |
| dc.contributor.author | Conard, Thierry | |
| dc.contributor.author | Wu, Xiangyu | |
| dc.contributor.author | Morin, Pierre | |
| dc.contributor.author | Lin, Dennis | |
| dc.contributor.author | Lockhart de la Rosa, Cesar Javier | |
| dc.contributor.author | Kar, Gouri Sankar | |
| dc.contributor.author | Delabie, Annelies | |
| dc.contributor.imecauthor | Lin, Zaoyang | |
| dc.contributor.imecauthor | Dekelver, Sven | |
| dc.contributor.imecauthor | Cott, Daire | |
| dc.contributor.imecauthor | Groven, Benjamin | |
| dc.contributor.imecauthor | Sergeant, Stefanie | |
| dc.contributor.imecauthor | Conard, Thierry | |
| dc.contributor.imecauthor | Wu, Xiangyu | |
| dc.contributor.imecauthor | Morin, Pierre | |
| dc.contributor.imecauthor | Lin, Dennis | |
| dc.contributor.imecauthor | Kar, Gouri Sankar | |
| dc.contributor.imecauthor | Delabie, Annelies | |
| dc.contributor.imecauthor | Lockhart de la Rosa, Cesar Javier | |
| dc.contributor.orcidimec | Dekelver, Sven::0009-0005-4713-7965 | |
| dc.contributor.orcidimec | Cott, Daire::0009-0000-0890-8820 | |
| dc.contributor.orcidimec | Groven, Benjamin::0000-0002-5781-7594 | |
| dc.contributor.orcidimec | Sergeant, Stefanie::0000-0001-9923-0903 | |
| dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
| dc.contributor.orcidimec | Morin, Pierre::0000-0002-4637-496X | |
| dc.contributor.orcidimec | Lin, Dennis::0000-0002-1577-6050 | |
| dc.contributor.orcidimec | Delabie, Annelies::0000-0001-9739-7419 | |
| dc.contributor.orcidimec | Wu, Xiangyu::0000-0002-6607-1819 | |
| dc.contributor.orcidimec | Lockhart de la Rosa, Cesar Javier::0000-0002-1401-0141 | |
| dc.date.accessioned | 2025-06-05T13:22:56Z | |
| dc.date.available | 2024-11-10T17:03:55Z | |
| dc.date.available | 2025-06-05T13:22:56Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work was done in the imec IIAP core CMOS programs and received funding from the European Union's Graphene Flagship (Grant Agreement No. 952792, 2D-EPL). | |
| dc.identifier.doi | 10.1116/6.0003894 | |
| dc.identifier.issn | 0734-2101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44767 | |
| dc.publisher | A V S AMER INST PHYSICS | |
| dc.source.beginpage | Art. 062202 | |
| dc.source.endpage | N/A | |
| dc.source.issue | 6 | |
| dc.source.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | |
| dc.source.numberofpages | 9 | |
| dc.source.volume | 42 | |
| dc.subject.keywords | WETTABILITY | |
| dc.subject.keywords | MOS2 | |
| dc.subject.keywords | GRAPHENE | |
| dc.title | Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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