Publication:
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
| dc.contributor.author | Izmailov, R. A. | |
| dc.contributor.author | O'Sullivan, Barry | |
| dc.contributor.author | Popovici, Mihaela Ioana | |
| dc.contributor.author | Afanas'ev, V. V. | |
| dc.contributor.imecauthor | O'Sullivan, Barry | |
| dc.contributor.imecauthor | Popovici, Mihaela Ioana | |
| dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
| dc.contributor.orcidimec | Popovici, Mihaela Ioana::0000-0002-9838-1088 | |
| dc.date.accessioned | 2022-09-01T14:20:36Z | |
| dc.date.available | 2022-06-23T02:25:39Z | |
| dc.date.available | 2022-09-01T14:20:36Z | |
| dc.date.issued | 2022 | |
| dc.identifier.doi | 10.1016/j.sse.2022.108388 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40003 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | 108388 | |
| dc.source.issue | na | |
| dc.source.journal | SOLID-STATE ELECTRONICS | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 194 | |
| dc.subject.keywords | KAPPA | |
| dc.title | Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4 | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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